Last Chance Mse Pro 8-inch High-quality Single-crystalline Aln/sapphire Substrate - Beat The Rush [2BnM9qaY]

MSE PRO™ 8-inch Single-Crystalline AlN/Sapphire Substrate

The MSE PRO™ 8-inch Single-Crystalline AlN/Sapphire Substrate is a cutting-edge material designed for the development of high-performance UVB/UVC-LEDs and GaN-based electrical power devices. Engineered with exceptional crystalline quality, these substrates are ideal for advanced optoelectronic and electronic applications. Their robust construction and high reliability make them a preferred choice for researchers and manufacturers in the field of semiconductor technology.

• Material: Crafted from high-quality single-crystalline aluminum nitride (AlN) on sapphire substrates, ensuring superior performance and durability.
• Crystalline Quality: Features an extremely low dislocation density of ~10⁸ cm⁻², which guarantees the high efficiency and reliability of target devices.
• Performance: The high crystalline quality serves as a prerequisite for the optimal performance of optoelectronic and electronic devices.

Product Specifications and Technical Details

The MSE PRO™ 8-inch Single-Crystalline AlN/Sapphire Substrate boasts precise specifications and technical details that cater to the demands of various applications. With a diameter of 8 inches and surface polishing options, these substrates are versatile and adaptable. Key specifications include:

• Diameter: 8-inch
• Surface Polishing: Single/Double polish
• Orientation: c-plane ±0.2°
• AlN Thickness: 400~1500 nm
• Thickness Nonuniformity: ≤1.5%
• Surface RMS: ≤1 nm
• Usable Area: >95%

These specifications highlight the precision and quality that the MSE PRO™ substrates offer, making them a reliable choice for your advanced applications.

Applications and Benefits

The MSE PRO™ 8-inch Single-Crystalline AlN/Sapphire Substrate is perfect for a wide range of applications, including UVB/UVC-LEDs, GaN electrical power devices, and advanced optoelectronic systems. Its exceptional crystalline quality and precise specifications make it an ideal choice for:

• UVB/UVC-LEDs: The substrate is suitable for the development of ultraviolet light-emitting diodes in the UVB and UVC spectra, providing a platform for innovative medical and industrial applications.
• GaN Electrical Power Devices: It is ideal for high-performance GaN-based power electronic devices, enabling efficient energy conversion and transmission.
• Optoelectronics: The substrate is perfect for advanced optoelectronic applications that require high crystalline quality, such as high-speed communication systems and optical sensors.

Invest in the MSE PRO™ 8-inch Single-Crystalline AlN/Sapphire Substrate to experience the benefits of superior performance and reliability in your next project.