Most Popular 4h-sic Epitaxial Film On 4h-sic(0001) With 4 Degree Off P Type, 2"dia. X0.33mm, Carrier Conc. (0.3-1.9) E16/cc, 2sp, Film Thickness: 11 Um - Us Warehouse [0fN5u86Z]

High-Purity 4H-SiC Epitaxial Films for Advanced Applications

Our premium 4H-SiC Epitaxial Films are designed for cutting-edge applications in the semiconductor industry. These films, crafted with precision on a 4H-SiC(0001) substrate, offer exceptional purity and performance. With a film thickness of 11 um and a carrier concentration ranging from 0.3 to 1.9 E16/cc, these films provide superior electrical properties. The P-type conductive type further enhances their applicability in various electronic devices.

Technical Specifications and Properties

The epitaxial films are produced using advanced techniques to ensure uniformity and high quality. Key specifications include a film thickness with an acceptance range of +/- 10%, a carrier concentration of (0.3~ 1.9)E16 /cc, and a surface finish that is polished on both sides to achieve an average roughness of Ra or RMS < 5 Angstrom. The 4H-SiC (0001) Prime grade substrate, with its off-axis of 4.0 +/- 0.5 degrees and a FWHM of 20 arc second, ensures optimal performance and reliability.

Applications and Benefits

These high-quality 4H-SiC Epitaxial Films are ideal for use in power electronics, high-frequency devices, and other advanced semiconductor applications. Their superior thermal conductivity and electrical properties make them a perfect choice for enhancing device performance and efficiency. Whether you are working on the development of new technologies or upgrading existing ones, our films offer the necessary features to meet your exact requirements. By choosing our products, you are investing in a future-proof solution that will drive innovation and efficiency in your projects.