Festive Deal Vgf-ge Wafer(100) . 50 Mmdia X 0.175 Mm, 1sp, P Type ( Ga Doped) R:0.008-0.021 Ohm.cm 2.0 Edition [lNshSOk7]

High-Quality Ge Wafer (100) for Advanced Applications

Our VGF-Ge Wafer (100) is designed for cutting-edge applications requiring exceptional performance and reliability. Engineered with precision, this wafer is a perfect choice for various semiconductor devices and photovoltaic cells. The wafer's 50 mm diameter and 175 micron thickness make it ideal for high-resolution imaging and sensitive sensors.

Key Features and Specifications

The VGF-Ge Wafer (100) boasts a P-type doping with a resistivity range of 0.008-0.021 Ohm.cm, ensuring optimal conductivity for your applications. The wafer features a (100) orientation with an accuracy of +/-0.5 degrees, ensuring uniformity and reliability. The surface is polished on one side and has an average roughness of < 0.4 nm, providing a smooth and even surface for your devices. Additionally, the wafer is grown using the Vertical Gradient Freeze (VGF) method, which guarantees high crystal quality and reduces defects.

Practical Applications and Benefits

The VGF-Ge Wafer (100) is suitable for a wide range of applications, including solar cells, infrared detectors, and optoelectronic devices. Its high-quality material and precise specifications make it an ideal choice for researchers, engineers, and manufacturers in the semiconductor and photovoltaic industries. The wafer's low defect density and exceptional performance will enhance the efficiency and reliability of your products. Moreover, the wafer is packaged under a 1000 class clean room environment, ensuring the highest level of cleanliness and quality control. Choose the VGF-Ge Wafer (100) for your next project and experience the benefits of a premium product that meets the highest industry standards.