Name: Factory Price Silicon-on-sapphire (11-02, R Plane ), 100mm Dia X 0.46mm,1sp, Film: 0.6 Um Thick Slash 75% Off The Price [IMVwop8z]
Brand: technovaprecision.com
SKU: HBS17507410011
Price: 40.99 USD
Availability: InStock
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Factory Price Silicon-on-sapphire (11-02, R Plane ), 100mm Dia X 0.46mm,1sp, Film: 0.6 Um Thick Slash 75% Off The Price [IMVwop8z]

Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al₂O₃) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation.

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SOS(Silicon on Sapphire) Wafers (DSP-Double sides polished)

Silicon EPI Layer:

Silicon Orientation: (100)
Type, Dopant: Intrinsic type, undoped
Silicon Thickness: 0.6 um +/- 10%
Resistivity: > 100 ohm.cm
Micro-particle density ( for particles > 2 um) < 2/cm^2

Sapphire Wafer:

R plane -- (1-102) with single flat
Purity: 99.996%
Wafer size: 100 mm dia x 0.46 mm thickness
Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from <C> on <R>
Front surface: Epi-polished (Ra < 4 nm)
Back surface: Fine ground
TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat