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Infineon Technologies Discreet Semiconductor Part #IPB65R115CFD7AATMA1

Introducing the Infineon Technologies Discreet Semiconductor Part #IPB65R115CFD7AATMA1, a cutting-edge MOSFET designed for superior performance and reliability. This high-quality component is ideal for various electronic applications, ensuring optimal power switching and efficient energy management.

Key Features and Specifications

The IPB65R115CFD7AATMA1 MOSFET is built with state-of-the-art technology, offering several notable features. First, its high voltage and current ratings provide robust performance, suitable for demanding applications. Additionally, the MOSFET features low on-state resistance, ensuring minimal power loss and improved efficiency. Below are some of its key features and specifications:

• High Voltage Rating: Up to 115V, enabling use in a wide range of applications.
• Low On-State Resistance: Just 0.65 ohms, minimizing power loss and enhancing energy efficiency.
• High Current Rating: Up to 65A, delivering exceptional power handling capabilities.

Practical Uses and Benefits

The Infineon Technologies Discreet Semiconductor Part #IPB65R115CFD7AATMA1 is versatile and well-suited for various applications. Its superior performance makes it an excellent choice for power supply and conversion systems, motor controls, and renewable energy solutions. The MOSFET's high efficiency and reliability also contribute to longer equipment lifespan and reduced maintenance costs. Below are some practical uses:

• Power Supply and Conversion Systems: The MOSFET's ability to handle high voltage and current ratings makes it ideal for power conversion and supply systems.
• Motor Controls: The MOSFET's efficiency and low on-state resistance make it a great choice for motor control applications, improving overall performance.
• Renewable Energy Solutions: The MOSFET's robust performance and efficiency make it a reliable component for renewable energy systems, such as solar and wind power.