Ultimate Gan Single Crystal Substrate,n-type, (10-10), 5 X10 X 0.3 Mm , 1sp Series [LUdT0XKF]

GaN Single Crystal Substrate: N-type (10-10)

Introducing our high-quality GaN Single Crystal Substrate, designed for precision applications in the semiconductor industry. This N-type substrate, with an orientation of (10-10), is the ideal choice for various advanced devices. Crafted using the advanced Hydride Vapor Phase Epitaxy (HVPE) method, our substrates offer exceptional performance and reliability.

Product Specifications and Features

Our GaN Single Crystal Substrate boasts a nominal thickness of 300+/- 25 microns, ensuring robust structural integrity. The dimensions are 5 mm x 10 mm with a tolerance of +/- 0.5 mm, providing precise control for your applications. Key features include a resistivity of <0.5 ohm.cm, a dislocation density of < 5x10^5 cm^-2, and a TTV of <=15 um, guaranteeing high-quality performance. The front surface finish is polished for epitaxy readiness, while the back surface is finely ground for optimal adhesion. Additionally, our substrates have a usable surface area of >90%, ensuring maximum efficiency.

Applications and Benefits

This GaN Single Crystal Substrate is perfect for a wide range of applications, including power electronics, optoelectronics, and high-frequency devices. Its high thermal conductivity and excellent electrical properties make it ideal for enhancing the performance of your devices. By choosing our substrates, you can benefit from improved device efficiency, reduced power consumption, and longer lifespan. Whether you are a researcher, engineer, or manufacturer, our GaN Single Crystal Substrate is the perfect solution for your needs.