In Stock Ge Wafer Undoped (110) 3" Dia X 0.5 Mm 2 Side Polished Resistivity: >50 Ohm-cm Set [0nQyoFJZ]

Ge Wafer Undoped (110) 3" dia x 0.5 mm

Discover the unparalleled quality of our Ge Wafer Undoped (110), designed to meet the most stringent requirements of semiconductor manufacturing. This wafer, with a diameter of 3 inches and a thickness of 0.5 mm, offers exceptional performance and reliability. Its surface is polished on both sides, ensuring a smooth and uniform finish that is essential for high-quality semiconductor processing.

• High-quality CZ grown for superior crystallographic purity and structural integrity.
• Optically polished surface with a surface finish of < 30A, providing a perfect base for further processing.

Robust Features and Specifications

Our Ge Wafer Undoped (110) stands out with its precision-engineered features and specifications. The wafer features a (110) orientation with a tolerance of +/-0.7 degrees, ensuring accurate alignment for advanced semiconductor devices. Its undoped nature with a resistivity of >50 Ohms/cm makes it ideal for applications where electrical insulation is critical.

• Two-side polished for a superior finish that enhances processability.
• N-type conductor with undoped properties for optimal electrical performance.

Applications and Benefits

The versatility of our Ge Wafer Undoped (110) makes it an essential component in a wide range of semiconductor applications. Its high purity and exceptional quality make it suitable for use in various devices, including solar cells, detectors, and optoelectronic devices. By choosing our product, you gain the following benefits:

• Enhanced performance due to the high purity and low defect density of the wafer.
• Cost-effective solution for semiconductor manufacturing, providing excellent value for money.