![Brand New Gaas (100), N Type Te Doped, 5 X 5 X 0.35 Mm, 1sp With A 85% Price Cut [skUb7S1Z]](https://cdn.shopify.com/s/files/1/0638/4664/6008/products/Thumb_Ge.4_f53e6ed6-23ee-4fa9-ad08-920c4d80fb83.jpg?v=1709617187)
Brand New Gaas (100), N Type Te Doped, 5 X 5 X 0.35 Mm, 1sp With A 85% Price Cut [skUb7S1Z]
$25.99
$83.99
-69%
GaAs single crystal waferGrowing Method: VGFOrientation: (100) Size: 5 x 5 x 0.35 mm Polishing: one side polishedDoping: Te dopedConductor type:
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Brand New Gaas (100), N Type Te Doped, 5 X 5 X 0.35 Mm, 1sp With A 85% Price Cut [skUb7S1Z]
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GaAs single crystal wafer
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Growing Method: VGF
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Orientation: (100)
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Size: 5 x 5 x 0.35 mm
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Polishing: one side polished
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Doping: Te doped
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Conductor type: N-type
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Carrier Concentration: (3.04-5.98) x 10^17 /cm^3
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Mobility: (3330-3850) cm^2/V.S
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Resistivity: (3.14-5.34) E-3 ohm-cm
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EPD: < 5000 /cm^2
- Note: EPI polishing
- RMS < 5 Angstrom
What Our Customers Say
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Absolutely no complaints!
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- Felix V..
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