![Discounted Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 Ohm.cm Flash Sale: 30% Off [N78G0lAS]](https://cdn.shopify.com/s/files/1/0638/4664/6008/products/Thumb_Ge_94f37638-91f7-4664-a7a5-2e8e437abe7e.jpg?v=1710348789)
Discounted Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 Ohm.cm Flash Sale: 30% Off [N78G0lAS]
$19.99
$63.99
-69%
Ge Wafer SpecificationGrowing Method: CZWafer Size: 10 x 10 x0.5 mmSurface Polishing: two sides epi polishedOrientation: (100)Surface roughness: RMS or Ra:~ 10 A(By AFM)Doping:
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Discounted Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 Ohm.cm Flash Sale: 30% Off [N78G0lAS]
Ge Wafer Specification
- Growing Method: CZ
- Wafer Size: 10 x 10 x0.5 mm
- Surface Polishing: two sides epi polished
- Orientation: (100)
- Surface roughness: RMS or Ra:~ 10 A(By AFM)
- Doping: Ga doped
- Conductor type: P-type
- Resistivity: 0.1-0.5 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room in wafer container
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