Hot Sale 3" Or 5" Aluminum Nitride (aln) Substrate For Rtp Furnace's Sample Holder - Ain-holder Limited Time 35% Off [aIDiQyEm]

3" or 5" Aluminum Nitride Substrate for RTP Furnace

This product offers a superior solution for your research and development needs with its high-quality 3" or 5" Aluminum Nitride (AlN) substrates. Engineered for RTP (Rapid Thermal Processing) furnaces, these substrates are designed to hold test samples securely and efficiently. The AlN substrates are known for their exceptional thermal conductivity, ensuring excellent temperature uniformity across the entire 3" or 5" diameter area, which is crucial for precise and reliable testing.

• Robust construction for secure sample holding
• Superior thermal conductivity for temperature uniformity
• Optimized for RTP furnace applications

Aluminum Nitride Ceramic Substrates Properties

Our Aluminum Nitride ceramic substrates are crafted with precision, boasting a purity of 99% (AN5116). These substrates exhibit remarkable thermal conductivity, exceeding 170 W/m.K, which is ideal for applications requiring rapid and uniform heating. The low thermal expansion of less than 4.2 x10-6/°C ensures stability and durability under thermal stress. Key properties include:

• Purity: 99% (AN5116)
• Density: >3.26 g/cm³
• Thermal Conductivity: >170 W/m.K
• Thermal Expansion: <4.2 x10-6/°C
• Dielectric Strength: >15 Kv/mm

Applications and Benefits

The 3" or 5" Aluminum Nitride substrates are perfect for a wide range of applications, including semiconductor manufacturing, solar cell processing, and material research. Their exceptional thermal properties make them ideal for RTP furnaces, where rapid and uniform heating is critical. By using these substrates, you can enjoy the following benefits:

• Enhanced thermal performance for faster and more efficient processing
• Improved temperature control for precise results
• Long-lasting durability for repeated use

Invest in our high-quality Aluminum Nitride substrates and experience the difference in your research and development processes.