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Visual Part #SQJ479EP-T1_GE3: The Ultimate P-Channel MOSFET Solution

Introducing the Visual Part #SQJ479EP-T1_GE3, a high-performance P-channel MOSFET designed to meet the demands of modern electronic applications. This innovative component, manufactured by Vishay Semiconductors, is built with cutting-edge technology and offers a wide range of features that make it an ideal choice for various electronic designs. With its robust design and exceptional reliability, the SQJ479EP-T1_GE3 is poised to enhance the performance of your projects.

Key Specifications and Features

The SQJ479EP-T1_GE3 is a Si-based P-channel MOSFET, featuring an SMD/SMT mounting style for easy integration into your circuitry. This PowerPAK-SO-8-4 packaged device boasts a Drain-Source Breakdown Voltage of 80 V and a Continuous Drain Current of 32 A, ensuring robust performance under demanding conditions. The low Rds On of 33 mΩ minimizes power loss, while the wide Vgs range of -20 V to +20 V provides flexibility in design. The device also offers a Gate-Source Threshold Voltage of 2.5 V and a Gate Charge of 90 nC, contributing to fast switching speeds. Additionally, the SQJ479EP-T1_GE3 operates within a wide temperature range of -55°C to +175°C, making it suitable for a variety of environments.

Practical Applications and Benefits

Whether you are designing for automotive, industrial, or consumer electronics, the SQJ479EP-T1_GE3 is the perfect choice. Its AEC-Q101 qualification ensures compliance with stringent automotive standards, making it ideal for automotive applications. The TrenchFET technology and SQ series packaging provide enhanced performance and reliability. With its power dissipation rating of 68 W and Enhancement mode operation, this MOSFET is designed to handle high power loads. Its versatile packaging options, including Reel, Cut Tape, and MouseReel, ensure that you can easily incorporate it into your production process. Upgrade your electronic designs with the SQJ479EP-T1_GE3 and experience the difference in quality and performance.